Superlattice
文献类型：专利
| 作者 | YANO MITSUHIRO |
| 发表日期 | 1988-12-21 |
| 专利号 | JP1988313886A |
| 著作权人 | 富士通株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Superlattice |
| 英文摘要 | PURPOSE:To change a refractive index at the time of the application of voltage largely by interposing a barrier layer having barrier height lower than that in a barrier layer on the outside of two well layers between these well layers. CONSTITUTION:The barrier height of a third barrier layer B3 is made lower than that in first and second barrier layers B1, B2, and selected so as to be brought to the same extent as the width of a well layer W1 or W2. Consequently, when an electric field is applied to a superlattice, an energy-band is inclined in the left-downward direction, electron existing in the well layer W2 move to the well layer W1, and, on the contrary, holes existing in the well layer W1 shift to the well layer W2. As a result, electron concentration in the well layer W1 and hole concentration in the well layer W2 are increased remarkably, and a line tying the peak of electron distribution and the peak of hole distribution in these layers has an inclination large to the thickness direction of a semiconductor layer. Accordingly, the refractive index of a waveguide can be changed largely by a small electric field. |
| 公开日期 | 1988-12-21 |
| 申请日期 | 1987-06-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87276]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 富士通株式会社 |
| 推荐引用方式 GB/T 7714 | YANO MITSUHIRO. Superlattice. JP1988313886A. 1988-12-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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