Semiconductor laser diode
文献类型：专利
| 作者 | NOMOTO, ETSUKO; OHTOSHI, TSUKURU |
| 发表日期 | 2006-08-24 |
| 专利号 | US20060187987A1 |
| 著作权人 | LUMENTUM JAPAN, INC. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser diode |
| 英文摘要 | A semiconductor laser device that can be operated at high power and that has a structure which can suppress kink, reduce loss and stabilize the direction of polarization simultaneously, and in which an optical pattern decreases monotonously as receding from an active layer and the crystal composition can be easily controlled. A plurality of layers of high refractive index different in the composition from that of the cladding layer are introduced being dispersed over a range wider than the spot size for directing light closer to the lower cladding layer of the semiconductor laser and stabilizing the direction of polarization. The electric field intensity is decreased monotonously as receding from the active layer for the optical pattern. |
| 公开日期 | 2006-08-24 |
| 申请日期 | 2005-08-03 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87283]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | LUMENTUM JAPAN, INC. |
| 推荐引用方式 GB/T 7714 | NOMOTO, ETSUKO,OHTOSHI, TSUKURU. Semiconductor laser diode. US20060187987A1. 2006-08-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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