Wide stripe laser diode
文献类型：专利
| 作者 | HAYAKAWA TOSHIRO |
| 发表日期 | 1991-12-25 |
| 专利号 | JP1991293790A |
| 著作权人 | IISUTOMAN KODATSUKU JIYAPAN KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Wide stripe laser diode |
| 英文摘要 | PURPOSE:To produce an approximately uniform oscillation by forming irregulari ties on the side face of a stripe layer defining the width of oscillating region thereby suppressing laser oscillation other than Fabry-Pferot mode. CONSTITUTION:An epitaxial layer 22, a clad layer 24, a gradient composition layer 26, a quantum well layer 28, a gradient composition layer 30, a p-A GaAs clad layer 32 and a p-GaAs cap layer 34 are grown continuously, in order, on an n-GaAs semiconductor substrate 20. An irregular face, i.e., a waved face, is then formed on the side face of the p-A GaAs clad layer 32 and the p-GaAs cap layer 34 through reactive ion beam etching and then subjected to etching into a stripe. Consequently, the differential refractive index fluctuates at the border in the active layer and since the dielectricaly emitted light is reflected on the border, an oscillation mode including reflection on the side face scarcely occurs. By such arrangement, a single oscillation mode of only Fabry-PFerot can be obtained. |
| 公开日期 | 1991-12-25 |
| 申请日期 | 1990-04-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87285]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | IISUTOMAN KODATSUKU JIYAPAN KK |
| 推荐引用方式 GB/T 7714 | HAYAKAWA TOSHIRO. Wide stripe laser diode. JP1991293790A. 1991-12-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。