Manufacture of semiconductor device
文献类型：专利
| 作者 | FURUMIYA SATOSHI |
| 发表日期 | 1986-03-27 |
| 专利号 | JP1986059795A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To reduce the number of processes for manufacturing a semiconductor laser, by growing successively N type compounds of indium, gallium, arsenic and phosphorus and P type compounds of indium and phosphorus. CONSTITUTION:An N type InGaAsP layer 2 and a P type InP layer 3 are formed on an N type InP compound substrate 1 by means of liquid-phase epitaxy. The P type InP layer 3 is then etched with the use of a mask 21, and then the N type InGaAsP layer 2 is also etched. The P type InP layer 3 and the N type InP compound substrate are provided with a continuous V-shaped groove. The mask 21 is then removed and the structure is washed. Subsequently, an N type InP layer 4, an N type InGaAsP layer 5, a P type InP layer 6 and a P type InGaAsP layer 7 are formed successively in that order by means of liquid-phase epitaxy. Electrodes 8 and 9 are then adhered thereon by vapor deposition. |
| 公开日期 | 1986-03-27 |
| 申请日期 | 1984-08-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87288]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | FURUMIYA SATOSHI. Manufacture of semiconductor device. JP1986059795A. 1986-03-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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