Semiconductor laser
文献类型：专利
| 作者 | KIMURA, TATSUYA; ONO, KENICHI |
| 发表日期 | 2006-04-20 |
| 专利号 | US20060083279A1 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | A semiconductor laser in which six layers are grown on one another, over an Si—GaAs substrate, in the following order: an Si—GaAs buffer layer, an Si—AlGaInP cladding layer, an active layer, an Mg—AlGaInP cladding layer, an Mg—AlGaInP band discontinuity reduction layer, and a Zn—GaAs contact layer. In this configuration, the carrier concentration of the Si—GaAs substrate may be from 1×1017 cm−3 to 7×1017 cm−3 to reduce the number of atoms diffusing from the Si—GaAs substrate into the active layer and so the active layer of the semiconductor laser has good light emission characteristics. |
| 公开日期 | 2006-04-20 |
| 申请日期 | 2005-06-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87290]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | KIMURA, TATSUYA,ONO, KENICHI. Semiconductor laser. US20060083279A1. 2006-04-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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