Apparatus for liquid phase epitaxial growth
文献类型：专利
| 作者 | ITOU MICHIHARU; YOSHIKAWA MITSUO; HAMASHIMA SHIGEKI |
| 发表日期 | 1983-02-08 |
| 专利号 | JP1983021830A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Apparatus for liquid phase epitaxial growth |
| 英文摘要 | PURPOSE:To prevent occurrence of crystal defects in the crystal layer by an apparatus wherein at least one of the surface of a substrate support and the surface of a sliding member in slide-contact with the support is coated with quartz. CONSTITUTION:An apparatus for liquid phase epitaxial growth comprises a support 3 formed of carbon and having a recess in which a substrate 1 of CdTe is buried, and a sliding member 4 moving on the support in slide-contact therewith. The sliding member 4 is provided with a liquid reservoir formed of a through hole for accommodating liquid phase Hg1-xCdxTe 5 which is a material for a crystal layer to be developed on the substrate through epitaxial growth. The surface of the support 3 is coated with a quartz plate 1 Thus, the surface of the support includes no unevenness and offers a smooth plane, so that liquid phase Hg1-xCdxTe 5 carried by the sliding member 4 moves on the support smoothly. As a result, it becomes possible to prevent impurities from entering into the liquid phase. |
| 公开日期 | 1983-02-08 |
| 申请日期 | 1981-07-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87304]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | ITOU MICHIHARU,YOSHIKAWA MITSUO,HAMASHIMA SHIGEKI. Apparatus for liquid phase epitaxial growth. JP1983021830A. 1983-02-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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