中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor light emitting device

文献类型:专利

作者ISHIKAWA HIROSHI; NAKANO YOSHINORI
发表日期1983-11-22
专利号JP1983200584A
著作权人FUJITSU KK
国家日本
文献子类发明申请
其他题名Semiconductor light emitting device
英文摘要PURPOSE:To keep the temperature characteristic good by restraining the shunt ratio of reactive current to active current by a method wherein a current block region wherein at least a junction is composed of a p type and a p type indium phosphide layer is arranged outside a stripe formed indium gallium arsenide phosphide active layer. CONSTITUTION:An n type InP lower clad layer 2, an InGaAsP active layer 3, and an InP upper clad layer 4 are successively formed on an n-type InP substrate Photoetching is performed with an SiO2 layer 11 formed thereon as a mask, thus the stripe part is formed, and thereafter the mask 11 is removed. At the side part of the substrate removed, the current block part, i.e., an n type InP layer 5, a p type InP layer 6, a p type InP layer 6', and an n type InP layer 7 are successively formed. Further, a p type InGaAsP cap layer 8 is formed. Finally, a positive electrode 10 consisting of the treble layer of Ti/Pt/Au is formed on the cap layer 8, and further a negative electrode 9 consisting of the alloy of An/Ge/Ni is formed on the under-surface of the substrate
公开日期1983-11-22
申请日期1982-05-18
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/87306]  
专题半导体激光器专利数据库
作者单位FUJITSU KK
推荐引用方式
GB/T 7714
ISHIKAWA HIROSHI,NAKANO YOSHINORI. Semiconductor light emitting device. JP1983200584A. 1983-11-22.

入库方式: OAI收割

来源:西安光学精密机械研究所

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