Semiconductor light emitting device
文献类型：专利
| 作者 | ISHIKAWA HIROSHI; NAKANO YOSHINORI |
| 发表日期 | 1983-11-22 |
| 专利号 | JP1983200584A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To keep the temperature characteristic good by restraining the shunt ratio of reactive current to active current by a method wherein a current block region wherein at least a junction is composed of a p type and a p type indium phosphide layer is arranged outside a stripe formed indium gallium arsenide phosphide active layer. CONSTITUTION:An n type InP lower clad layer 2, an InGaAsP active layer 3, and an InP upper clad layer 4 are successively formed on an n-type InP substrate Photoetching is performed with an SiO2 layer 11 formed thereon as a mask, thus the stripe part is formed, and thereafter the mask 11 is removed. At the side part of the substrate removed, the current block part, i.e., an n type InP layer 5, a p type InP layer 6, a p type InP layer 6', and an n type InP layer 7 are successively formed. Further, a p type InGaAsP cap layer 8 is formed. Finally, a positive electrode 10 consisting of the treble layer of Ti/Pt/Au is formed on the cap layer 8, and further a negative electrode 9 consisting of the alloy of An/Ge/Ni is formed on the under-surface of the substrate |
| 公开日期 | 1983-11-22 |
| 申请日期 | 1982-05-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87306]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | ISHIKAWA HIROSHI,NAKANO YOSHINORI. Semiconductor light emitting device. JP1983200584A. 1983-11-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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