半導体レ-ザ
文献类型：专利
| 作者 | 伊藤 達也; 末松 安晴 |
| 发表日期 | 1994-10-12 |
| 专利号 | JP1994080864B2 |
| 著作权人 | FUJIKURA KK |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザ |
| 英文摘要 | PURPOSE:To eliminate the need for establishing difficult process conditions and obtain a semiconductor laser that is favorably reproducible by forming a current bottleneck layer like a stripe in the direction of optical axis and also in the position corresponding to an external waveguide layer at both sides of an active region on a substrate. CONSTITUTION:Recessed grooves 1b and 1c are formed by photolithography on an upper plane of a p-InP substrate In such a case, widths of the recessed grooves 1b and 1c are formed so that they are equal to that of an external waveguide layer 4 or slightly larger than that of the layer 4 and there is a somewhat difference between both widths of the grooves and the layer. Further, their positions are so correspondent to a position of the waveguide layer 4 in a distributed reflection region that the grooves are formed at both sides of an active region where a part of the active region used as a current path is excluded. Then N-InGaAsP current bottleneck layers 15 perform an epitaxial growth on the substrate In such a case, a width between 1b and 1c is so narrow that it is filled with its growth in a short time and its upper plane becomes flat. This approach makes it possible to form simply the current bottleneck layers that are favorably reproducible without establishing difficult process conditions. |
| 公开日期 | 1994-10-12 |
| 申请日期 | 1987-01-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87307]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJIKURA KK |
| 推荐引用方式 GB/T 7714 | 伊藤 達也,末松 安晴. 半導体レ-ザ. JP1994080864B2. 1994-10-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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