Semiconductor laser device and method of manufacturing the same
文献类型：专利
| 作者 | MIYACHI, MAMORU; WATANABE, ATSUSHI; TAKAHASHI, HIROKAZU; KIMURA, YOSHINORI |
| 发表日期 | 2006-07-18 |
| 专利号 | US7079563 |
| 著作权人 | PIONEER CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device and method of manufacturing the same |
| 英文摘要 | An improved semiconductor laser device is provided which has a small distance between laser light emitting spots. Such laser device comprises i) a first light emitting element including a laser oscillation section provided with a ridge waveguide and formed by forming a group-III nitride semiconductor film on a substrate, an insulating layer and an ohmic electrode layer, ii) a second light emitting element including a laser oscillation section provided with a waveguide and formed by forming III–V compound semiconductor film, an insulating layer and an ohmic electrode layer. By virtue of the adhesive metal layer interposed between the two ohmic electrode layers, the two laser oscillation sections are combined together, thereby forming the improved semiconductor laser device which has a small distance between laser light emitting spots of the two laser oscillation sections. |
| 公开日期 | 2006-07-18 |
| 申请日期 | 2003-12-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87310]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | PIONEER CORPORATION |
| 推荐引用方式 GB/T 7714 | MIYACHI, MAMORU,WATANABE, ATSUSHI,TAKAHASHI, HIROKAZU,et al. Semiconductor laser device and method of manufacturing the same. US7079563. 2006-07-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。