Liquid phase growth method
文献类型：专利
| 作者 | SASAI YOUICHI; OONAKA SEIJI |
| 发表日期 | 1985-02-19 |
| 专利号 | JP1985032319A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Liquid phase growth method |
| 英文摘要 | PURPOSE:To enable to perform a buried epitaxial growing method with excellent reproducibility by a method wherein a substrate of construction in which a growth-preventing film such a stripe-formed insulating film and the like which at least comes in contact with the one end part of a mesa stripe part is used on the substrate whereon mesa stripe structure having an insulating film is formed. CONSTITUTION:SiO2 films 14, 14a and 14b are provided contacting both ends of the stripe of an SiO2 film 6 in vertical direction. As a result, the pressure of the melt solution applied to the stripe end part of the SiO2 film 6 generating by the SiO2 film 14a when a substrate is being slided can be lessened. Also, pertaining to the breaking of a mesa part, said breaking can be prevented, because the mesa part is supported from both sides using SiO2 film 14a and 14b. As to the growth-preventing films 6 and 14, the film which can be used is not limited to SiO2 film, but PSG, a nitride film, a carbon film, an amorphous silicon film and films with which crystal growth is prevented can be used, too. |
| 公开日期 | 1985-02-19 |
| 申请日期 | 1983-08-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87315]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | SASAI YOUICHI,OONAKA SEIJI. Liquid phase growth method. JP1985032319A. 1985-02-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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