半導体レーザ
文献类型:专利
作者 | 松山 隆之 |
发表日期 | 1997-02-13 |
专利号 | JP2609776B2 |
著作权人 | 株式会社東芝 |
国家 | 日本 |
文献子类 | 授权发明 |
其他题名 | 半導体レーザ |
英文摘要 | PURPOSE:To restrain the Hall burning of the title laser by a method wherein the total shift amount by the total of the phase shift amount of light in a waveguide and by the phase shift amount of equivalent light due to the phase of a periodic structure is other than an integral multiple of pi and the confinement factor of light in the waveguide is made different along the axial direction of a resonator by the cyclic structure. CONSTITUTION:A diffraction grating 2 is formed on an n-InP substrate At this time, a part whose phase is displaced by pi of the period of the diffraction grating 2, i.e., a phase shifter 3, is formed. This is intended to dislocate the phase shift amount of equivalent light by pi/2. A guide layer 4, a clad layer 6 and an ohmic layer 7 are crystal-grown on the diffraction grating 2. Then, a light waveguide 8 is formed in such a way that the width in the center of a resonator is at W2 and that the width at the end of the resonator is at W The light waveguide layer 8 is composed of the guide layer 4 and an active layer 5. At this time, the W2 and the W1 are designed in such a way that the total value of the equivalent shift amount in a waveguide region is at an integral multiple of pi. |
公开日期 | 1997-05-14 |
申请日期 | 1991-06-12 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/87329] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | 株式会社東芝 |
推荐引用方式 GB/T 7714 | 松山 隆之. 半導体レーザ. JP2609776B2. 1997-02-13. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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