Free standing quantum well structure
文献类型：专利
| 作者 | KNOX, WAYNE HARVEY; SHUNK, STEPHEN CASON; WILLIAMS, MICHAEL D.; ZUCKER, JANE ELISA |
| 发表日期 | 1995-02-01 |
| 专利号 | EP0637110A1 |
| 著作权人 | AT&T CORP. |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Free standing quantum well structure |
| 英文摘要 | Conventional microfabrication techniques in conjunction with the precise growth of layers of single crystalline materials by epitaxial growth techniques allow the creation of electro-optic microstructures which achieve high reflectivity with only few periods of layer pairs. Standard lithographic techniques are utilized to fabricate free-standing quantum wells which are confined on both sides by air, acrylic resin, or vacuum. The quantum wells are fabricated from spatially and compositionally modulated III-V superlattices in which alternate layers of the structures are sacrificed by selective etching. The structures are patterned such that the quantum wells are suspended between support posts. |
| 公开日期 | 1995-02-01 |
| 申请日期 | 1994-07-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87331]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AT&T CORP. |
| 推荐引用方式 GB/T 7714 | KNOX, WAYNE HARVEY,SHUNK, STEPHEN CASON,WILLIAMS, MICHAEL D.,et al. Free standing quantum well structure. EP0637110A1. 1995-02-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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