Liquid-phase epitaxial growth method
文献类型：专利
| 作者 | YAMAZAKI SUSUMU |
| 发表日期 | 1986-09-03 |
| 专利号 | JP1986198718A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Liquid-phase epitaxial growth method |
| 英文摘要 | PURPOSE:To obtain an AlInAs thick-film lattice-aligning with an InP substrate by a solution having a composition fitted for a growth-start temperature by using an Al-In-As three-element solution and lowering the start temperature in succession. CONSTITUTION:InP having a (111) A face from which In atoms are exposed is used, and XAl 5.24X10TG-3.28X10 and XAs 7.81X10TG-0.45 are each selected in several growth-start temperature TG and a liquid-layer composition X of Al and As lattice-aligning with InP. A first layer is grown at TG=790 deg.C and temperature-drop width DELTAT=10 deg.C first, a second layer is grown at TG=780 deg.C and DELTAT=10 deg.C, and the thickness of several growth layer is limited in an extent that mirror surfaces are acquired. According to the constitution, a thick-film in 1mum or more consisting of AlInAs lattice-aligning with InP can be shaped through continuous multilayer growth, thus resulting in an advantageous state to the formation of an avalanche photodiode. |
| 公开日期 | 1986-09-03 |
| 申请日期 | 1985-02-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87339]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | YAMAZAKI SUSUMU. Liquid-phase epitaxial growth method. JP1986198718A. 1986-09-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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