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文献类型：专利
| 作者 | YANO MORICHIKA; YAMAMOTO SABURO; KURATA YUKIO; MATSUI KANEKI; HAYAKAWA TOSHIRO; TAKIGUCHI HARUHISA |
| 发表日期 | 1985-06-07 |
| 专利号 | JP1985023519B2 |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To facilitate manufacture of a semiconductor laser device as well as improve its quality by selectively forming a plurality of semiconductor layers, by epitaxial growth, on the crystal surface on the inclined plane obtained by photoetching a semiconductor substrate into a step shape. CONSTITUTION:On an N type semiconductor substrate 1, an insulating layer 2 and a photoresist film 3 are formed over the whole surface. Then, the resist 3 is partially irradiated with light 4 to photoetch the substrate 1 into a step shape. Then, an insulating layer 7 and a photoresist film 8 are formed over the whole surface and partially irradiated with light 9 to photoetch the inclined plane 6 so that a crystal surface 10 is exposed below the layers 2 and 7. Then, on the insulating layer 7 on the lower step surface 5, an N type layer 11, an active layer 12 and P type layers 13 and 14 are successively formed on the crystal surface 10 by selective epitaxial growth, and then electrodes 15 and 16 are formed. Thereby, a semiconductor laser device can be manufactured by a single photoetching and a single epitaxial growth, so that the manufacture is facilitated. Moreover, the quality and the yield improve. |
| 公开日期 | 1985-06-07 |
| 申请日期 | 1980-02-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87346]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | YANO MORICHIKA,YAMAMOTO SABURO,KURATA YUKIO,et al. -. JP1985023519B2. 1985-06-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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