Manufacture of semiconductor device
文献类型：专利
| 作者 | UEDA OSAMU; TANAHASHI TOSHIYUKI |
| 发表日期 | 1984-02-27 |
| 专利号 | JP1984035432A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To form a recessed groove without forming a bottom section to a mask by boring the mask film of a semiconductor base body in striped shape and irradiating ion beams at an angle of incidence selected to the main surface of the base body while executing a relative rotary motion around an axis vertical to the main surface. CONSTITUTION:An N-InP layer 2 and a P-InP layer 3 are superposed on an N- InP substrate 1, the layer 3 is coated with an SiO2 film 4, and the surface is bored 5 in the striped shape. The substrate 1 is fixed to a base 21, an angle theta formed by a base surface and ion beams 22 is set, and the opening is ion-etched while turning the substrate 1 at constant velocity according to the base 21 around the axis vertical to the base surface. The V-shaped groove 6' can be formed by selecting conditions. N-InP 7, an InGaAsP active layer 8, P-InP 9, P- InGaAsP 10 and electrodes 11, 12 are attached according to a conventional method, and a laser is completed. According to the constitution, the shape of the section of a recessed section is selected regardless of a crystal face and can be formed by selecting the angle of incidence and the speed of revolution of the base. |
| 公开日期 | 1984-02-27 |
| 申请日期 | 1982-08-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87360]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | UEDA OSAMU,TANAHASHI TOSHIYUKI. Manufacture of semiconductor device. JP1984035432A. 1984-02-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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