Mask for selective formation of thin film
文献类型：专利
| 作者 | KOMATSU HIROSHI |
| 发表日期 | 1989-08-29 |
| 专利号 | JP1989215089A |
| 著作权人 | SEIKO EPSON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Mask for selective formation of thin film |
| 英文摘要 | PURPOSE:To enable self alignment to be performed and to improve both reproducibility and productivity, by a structure wherein a constitutive material is made to include an amorphous material in order to form a mask for selectively forming thin film which is used to selectively form a II-VI compound semiconductor thin film on a semiconductor substrate. CONSTITUTION:A semiconductor substrate having a DH structure is prepared in which a N type clad layer 102, an active layer 103, a P type clad layer 104 and a P type contact layer 105 are in this order formed on an N type GaAs substrate 10 Subsequently, an amorphous SiO2 thin film of about 3000Angstrom in thickness is deposited to the surface of the semiconductor substrate by means of a thermal CVD method. This SiO2 thin film is etched in a stripe shape through a photolithography process to form a SiO2 mask 106. Next, the DH structure is etched through the contact layer 105 to the upper section of the P type clad layer 104 by means of a sulfate etchant, using the SiO2 mask 106 as a protective layer for the etching. At this time, a rib 107 is formed in a reverse mesa shape only under the SiO2 mask 106. Thereafter, a ZnSe thin film layer 105 is so epitaxially grown on the surface of the DH structure as to bury the rid 107 therein by using the SiO2 mask 106 as a mask for selectively forming thin film. |
| 公开日期 | 1989-08-29 |
| 申请日期 | 1988-02-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87364]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORP |
| 推荐引用方式 GB/T 7714 | KOMATSU HIROSHI. Mask for selective formation of thin film. JP1989215089A. 1989-08-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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