Semiconductor laser
文献类型：专利
| 作者 | WATANABE KAZUAKI |
| 发表日期 | 1992-10-29 |
| 专利号 | JP1992307781A |
| 著作权人 | SEIKO EPSON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To contrive a reduction in the threshold value of a semiconductor laser, an increase in the efficiency of the laser and an increase in the output of the laser by a method wherein an active layer is made to have a single quantum well structure, wherein the number of a well layer is 1, and at the same time, the materials or the film thicknesses on at least one side of the materials for first and second optical waveguide layers and the film thicknesses of the first and second optical waveguide layers are different from each other. CONSTITUTION:An N-type buffer layer 12, an N-type lower clad layer 13, an N-type lower optical waveguide layer 14, a quantum well active layer 15, a P-type upper optical waveguide layer 16, a P-type upper clad layer and a P-type contact layer are laminated in order on an N-type GaAs substrate 1 The contact layer and the upper clad layer are processed into a rib form to form an optical waveguide. The layer 15 is a single quantum well using a non-doped GaAs layer as a well layer. By turning an energy level in the layer 15 into a quantization level, the luminous efficiency of a semiconductor laser is increased and the threshold current value of the laser is reduced. Moreover, the density of light in the layer 15 is lowered by forming a waveguide structure into an asymmetrical state at the upper and lower parts of the layer 15 and the highest output of the laser is increased. |
| 公开日期 | 1992-10-29 |
| 申请日期 | 1991-04-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87371]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORP |
| 推荐引用方式 GB/T 7714 | WATANABE KAZUAKI. Semiconductor laser. JP1992307781A. 1992-10-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。