Semiconductor laser
文献类型：专利
| 作者 | HARUI, HIRONOBU; HIRATA, SHOJI |
| 发表日期 | 1993-10-19 |
| 专利号 | US5255280 |
| 著作权人 | SONY CORPORATION A CORP. OF JAPAN |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | A semiconductor laser has a substrate having a strip raised region on a principal surface thereof which comprises a {100} face, the strip raised region extending along a axis. First lower and second upper cladding layers are disposed on the substrate, and an active layer is interposed between the first and second cladding layers. The first and second cladding layers and the active layers are divided into sections in a cross-sectionally triangular body and sections on opposite sides of the cross-sectionally triangular body, by two slant surfaces extending from opposite edges of the raised region and intersecting with each other above the raised region. The semiconductor laser also includes a current blocking layer disposed on each side of the cross-sectionally triangular body, a third cladding layer covering the current blocking layer and the cross-sectionally triangular body, and a cap layer disposed on the third cladding layer. A supplied current flows substantially through the active layer in the cross-sectionally triangular body, enabling the active layer to emit light. |
| 公开日期 | 1993-10-19 |
| 申请日期 | 1992-04-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87373]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORPORATION A CORP. OF JAPAN |
| 推荐引用方式 GB/T 7714 | HARUI, HIRONOBU,HIRATA, SHOJI. Semiconductor laser. US5255280. 1993-10-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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