Semiconductor laser element
文献类型:专利
作者 | HASHIMOTO MASAYASU; INOUE KENTARO |
发表日期 | 1989-07-24 |
专利号 | JP1989184894A |
著作权人 | 三洋電機株式会社 |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser element |
英文摘要 | PURPOSE:To decrease threshold current in a GaAlAs semiconductor laser element having a Fabry-Perot resonator, by forming an active layer having a thickness of 0.1mum or less and forming the resonator having a length of 100-200mum. CONSTITUTION:A block layer is provided on a GaAs substrate 1 if desired. An active layer 2 is clamped by upper and lower clad layers 3 and an electrode is provided through a cap layer 4 if required. Both an active layer 2 and clad layers 3 are formed of GaAlAs epitaxially grown by liquid-phase, MOCVD or MBE epitaxy but they have different mixed crystal proportions. Since exposed surface of the active layer 2 formed in a lightemitting region by current constriction or the like provides a Fabry-Perot resonance surface, a length lof the resonator is equal to that of the element. A thickness of the active layer 2 is 0.1mum or less, while the length l of the resonator is 100-200mum. |
公开日期 | 1989-07-24 |
申请日期 | 1988-01-13 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/87378] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | 三洋電機株式会社 |
推荐引用方式 GB/T 7714 | HASHIMOTO MASAYASU,INOUE KENTARO. Semiconductor laser element. JP1989184894A. 1989-07-24. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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