中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor laser element

文献类型:专利

作者HASHIMOTO MASAYASU; INOUE KENTARO
发表日期1989-07-24
专利号JP1989184894A
著作权人三洋電機株式会社
国家日本
文献子类发明申请
其他题名Semiconductor laser element
英文摘要PURPOSE:To decrease threshold current in a GaAlAs semiconductor laser element having a Fabry-Perot resonator, by forming an active layer having a thickness of 0.1mum or less and forming the resonator having a length of 100-200mum. CONSTITUTION:A block layer is provided on a GaAs substrate 1 if desired. An active layer 2 is clamped by upper and lower clad layers 3 and an electrode is provided through a cap layer 4 if required. Both an active layer 2 and clad layers 3 are formed of GaAlAs epitaxially grown by liquid-phase, MOCVD or MBE epitaxy but they have different mixed crystal proportions. Since exposed surface of the active layer 2 formed in a lightemitting region by current constriction or the like provides a Fabry-Perot resonance surface, a length lof the resonator is equal to that of the element. A thickness of the active layer 2 is 0.1mum or less, while the length l of the resonator is 100-200mum.
公开日期1989-07-24
申请日期1988-01-13
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/87378]  
专题半导体激光器专利数据库
作者单位三洋電機株式会社
推荐引用方式
GB/T 7714
HASHIMOTO MASAYASU,INOUE KENTARO. Semiconductor laser element. JP1989184894A. 1989-07-24.

入库方式: OAI收割

来源:西安光学精密机械研究所

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