Semiconductor laser element
文献类型：专利
| 作者 | HASHIMOTO MASAYASU; INOUE KENTARO |
| 发表日期 | 1989-07-24 |
| 专利号 | JP1989184894A |
| 著作权人 | 三洋電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To decrease threshold current in a GaAlAs semiconductor laser element having a Fabry-Perot resonator, by forming an active layer having a thickness of 0.1mum or less and forming the resonator having a length of 100-200mum. CONSTITUTION:A block layer is provided on a GaAs substrate 1 if desired. An active layer 2 is clamped by upper and lower clad layers 3 and an electrode is provided through a cap layer 4 if required. Both an active layer 2 and clad layers 3 are formed of GaAlAs epitaxially grown by liquid-phase, MOCVD or MBE epitaxy but they have different mixed crystal proportions. Since exposed surface of the active layer 2 formed in a lightemitting region by current constriction or the like provides a Fabry-Perot resonance surface, a length lof the resonator is equal to that of the element. A thickness of the active layer 2 is 0.1mum or less, while the length l of the resonator is 100-200mum. |
| 公开日期 | 1989-07-24 |
| 申请日期 | 1988-01-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87378]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三洋電機株式会社 |
| 推荐引用方式 GB/T 7714 | HASHIMOTO MASAYASU,INOUE KENTARO. Semiconductor laser element. JP1989184894A. 1989-07-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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