-
文献类型：专利
| 作者 | MUSHIGAMI MASAHITO; TANAKA HARUO; FUKADA HAYAMIZU |
| 发表日期 | 1988-12-26 |
| 专利号 | JP1988067351B2 |
| 著作权人 | ROHM KK |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To simplify the manufacturing steps and to improve the mass productivity by continuously laminating to a protective layer on a semiconductor substrate in a growing chamber, forming a strips groove out of the chamber, and evaporating impurity on the surface in the chamber. CONSTITUTION:A semiconductor substrate 10 is mounted and heated on a molybdenum base disposed in a growing chamber of MBE device. A lower clad layer 20 made of N type AlxGa1-xAs, an active layer 21 made of AlxGa1-xAs, the first upper clad layer 22 made of P type AlxGa1-xAs, a photoabsorbing layer 23 made of N type GaAs, and a protective layer 24 made of N type AlxGa1-xAs are grown thereon. Then, the substrate 10 is removed from the chamber, with a photoresist 50 as a mask, a stripe groove 30 is formed. Then, the resistor 50 is removed, filled in the chamber, the surface of the substrate is impacted by arsenic while heating to evaporate an impurity on the surface. Then, the second upper clad layer 25, a cap layer 26, and electrodes 40, 41 are formed. |
| 公开日期 | 1988-12-26 |
| 申请日期 | 1984-07-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87382]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ROHM KK |
| 推荐引用方式 GB/T 7714 | MUSHIGAMI MASAHITO,TANAKA HARUO,FUKADA HAYAMIZU. -. JP1988067351B2. 1988-12-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。