Manufacture of semiconductor laser element
文献类型：专利
| 作者 | TANAKA HIROKAZU; KURIHARA HARUKI |
| 发表日期 | 1992-03-16 |
| 专利号 | JP1992082290A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser element |
| 英文摘要 | PURPOSE:To enable the clad layers divided into two sections to be formed without resorting to the crystal deposition process by a method wherein an active layer is formed on the first beam confining layer and after the formation of the second beam confining layer, the whole body is heat-treated. CONSTITUTION:An n-type AlGaAs beam confining layer 102, a p-type GaInPAs active layer 103, a p conductive type AlGaAs beam confining layer 104, a p-type GaAs ohmic contact layer 105 are successively deposited on an n-type GaAs substrate 10 Next, the whole body is heat-treated at the temperature of about 800 deg.C for 30min. At this time, the mutual diffusion of group III element occurs between the layer 103 and the layers 102, 104. Resultantly, the carrier confining layers 106, 107 comprising AlGaInP or AlGaInPAs are formed between the layer 103 and the layers 102, 104. Later, metallic electrode layers 108, 109 are formed. Through these procedures, the clad layers divided into two sections can be formed without resorting to the crystal deposition process. |
| 公开日期 | 1992-03-16 |
| 申请日期 | 1990-07-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87407]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | TANAKA HIROKAZU,KURIHARA HARUKI. Manufacture of semiconductor laser element. JP1992082290A. 1992-03-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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