Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | KOMAZAKI IWAO |
| 发表日期 | 1990-06-13 |
| 专利号 | JP1990154493A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser producing low noise by sequentially laminating a first clad layer, an active layer, an optical guide layer and a second clad layer and forming a current blocking layer on the side face of the second clad layer. CONSTITUTION:A first clad layer 2, an active layer 3 having smaller band gap than that of the layer 2, an optical guide layer 4, and a second clad layer 5 having a stripelike mesa structure of an inverted trapezoidal shape of section state are sequentially laminated. Further, a current block layer 7 for absorbing a light generated at the active layer is formed on the side face (mesa side face) of the clad layer 5. Thus, even if a high frequency superposing system is not employed, a semiconductor laser producing low noise can be obtained. |
| 公开日期 | 1990-06-13 |
| 申请日期 | 1988-12-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87409]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | KOMAZAKI IWAO. Semiconductor laser and manufacture thereof. JP1990154493A. 1990-06-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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