Structure of semiconductor laser and manufacture of said laser
文献类型：专利
| 作者 | SHIMA KATSUTO |
| 发表日期 | 1986-09-18 |
| 专利号 | JP1986210687A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Structure of semiconductor laser and manufacture of said laser |
| 英文摘要 | PURPOSE:To prevent obstruction against current blocking action, by forming a semiconductor layer having the same composition as that of an active layer in contact with the outside of two current narrowing layers, and by absorbing electrons, which flow into the narrowing layer, by the semiconductor layer having the same composition as that of the outer active layer. CONSTITUTION:On an N-InP substrate 1, a mask for selective growing is formed out of an SiO2 film 19. A part (a) is formed so as to have a width of 2-5mum. A part (b) is formed at a width of 3-6mum. Then, by a liquid phase epitaxial growing method, a clad layer 2 having a thickness of 0.1-0.5mum, active layers 3 and 3' having a thickness of 0.1mum and clad layers 4 and 4' having a width of 1mum or less are sequentially grown. At this time, both sides of the active layers are stopped to grow by the SiO2 film on the substrate. Therefore, the active layer becomes flat at the central part and thin at both sides. Then, the SiO2 film 19 is removed, and the entire surface is lightly etched. The amount of etching is about 0.1-0.5mum. Then the second liquid phase epitaxial growing is performed, and a current narrowing layer 5, a current blocking layer 6, a P INP layer 7 and P InGaAsP contact layer 8 are grown. |
| 公开日期 | 1986-09-18 |
| 申请日期 | 1985-03-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87414]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | SHIMA KATSUTO. Structure of semiconductor laser and manufacture of said laser. JP1986210687A. 1986-09-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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