Interferometric semiconductor laser
文献类型：专利
| 作者 | ALBRECHT MOZER; OLAF HILDEBRAND; HARMUT EISELE; ULRICH SPALTHOFF; KLAUS WUNSTEL; HEINZ SCHWEIZER; MICHAEL SCHILLING; EISELE, HARMUT; HILDEBRAND, OLAF; MOZER, ALBRECHT |
| 发表日期 | 1991-03-28 |
| 专利号 | AU1990063049A1 |
| 著作权人 | ALCATEL N.V. |
| 国家 | 澳大利亚 |
| 文献子类 | 发明申请 |
| 其他题名 | Interferometric semiconductor laser |
| 英文摘要 | An interferometric semiconductor laser having a GaAs/GaAlAs heterostructure is known. Such a semiconductor laser is constructed using the principle of the Michelson or Mach-Zehnder interferometer and, compared with a laser having a Fabry-Pérot resonator, offers the advantage of better side mode suppression of the laser light. …The invention provides a semiconductor laser having a controllable beam splitter (5). Three segments (1, 2, 3) with laser-active zones and a monitor diode (4) form a crossed laser and are connected to one another via the beam splitter (5). The beam splitter (5) has either a holographic grating or a partially transparent mirror which has been produced by step etching. The beam splitter has electrodes for controlling the optical coupling between the segments (1, 2, 3) by current injection. The laser-active zones are formed by distributed waveguide lasers, broad-area lasers or multi-quantum-well layers. …Particularly advantageous is a semiconductor laser having two beam splitters and three monitor diodes for controlling the phase, the power and the filter wavelength of the emitted laser light. Such semiconductor lasers are suitable for optical telecommunication transmission. …… |
| 公开日期 | 1991-03-28 |
| 申请日期 | 1990-09-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87415]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ALCATEL N.V. |
| 推荐引用方式 GB/T 7714 | ALBRECHT MOZER,OLAF HILDEBRAND,HARMUT EISELE,et al. Interferometric semiconductor laser. AU1990063049A1. 1991-03-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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