Manufacture of semiconductor laser
文献类型：专利
| 作者 | NAMISAKI HIROBUMI |
| 发表日期 | 1990-09-19 |
| 专利号 | JP1990237188A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To prevent the characteristic from decreasing even at a high temperature and in high output by installing a low-resistivity p-InP layer on an InGaAsP active layer, forming patterns in the two layers, and growing a high-resistivity p-InP layer thereon. CONSTITUTION:An active layer 1 and a first semiconductor layer 20 joined thereto by heterojunction are grown on a semiconductor substrate 10 and selectively etched into groove form to separate part of the layers from other parts. A semiconductor crystal 2 of composition to join to the active layer 1 by heterojunction and including a layer of the same conductivity type as the first semiconductor 20 and lower impurity concentration than the two semiconductor layers is grown to fill the grooves and bury the surface of the first semiconductor layer 20. Therefore, the series resistance values of two current paths are different and the resistance of the current path flowing to an active region is lower than that of a leak path, therefore, the decrease of the voltage of the current path passed through the active layer 1 becomes relatively little. Thereby a current flows intensively to the active region to prevent the characteristic from decreasing even at a high temperature and in high output. |
| 公开日期 | 1990-09-19 |
| 申请日期 | 1989-03-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87426]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | NAMISAKI HIROBUMI. Manufacture of semiconductor laser. JP1990237188A. 1990-09-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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