Manufacture of semiconductor light-emitting device
文献类型：专利
| 作者 | HIRANO RIYOUICHI |
| 发表日期 | 1985-06-06 |
| 专利号 | JP1985102790A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To suppress it for the titled element, semiconductor light-emitting device, to deteriorate by a method wherein impurities are diffused by performing a thermal treatment in the growing process of each semiconductor layer in the inside and outside of a striped groove, and by making the p-n junction interfaces shift by this diffusion, an intersection of the exposed p-n junction interfaces and the p-n junction interfaces at a time after the exposed interfaces were made to shift is eliminated. CONSTITUTION:A p type InP layer 11 is formed on a substrate 10 by performing the first growth or diffusion, then a striped groove 15 is formed. After that, p type InP clad layers 12 and 12a, p type or n type InGaAsP layers 13 and 13a and an n type InP clad layer 14 are successively formed by performing the second growth inclusive of the interior and exterior of the groove 15. At the time of this manufacture, when the carrier concentration of p type impurities in the p type InP layer 11 was set at Np and the carrier concentration of n type impurities in the n type InP clad layer 14 was set at Nn, the carrier concentrations are set under such a condition as to satisfy a condition of Np>Nn. |
| 公开日期 | 1985-06-06 |
| 申请日期 | 1983-11-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87428]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | HIRANO RIYOUICHI. Manufacture of semiconductor light-emitting device. JP1985102790A. 1985-06-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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