Optoelectronic integrated circuit and manufacture thereof
文献类型：专利
| 作者 | SERIKAWA TADASHI; MATSUOKA TAKASHI; TANAKA HIDENAO |
| 发表日期 | 1991-02-22 |
| 专利号 | JP1991041769A |
| 著作权人 | 日本電信電話株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optoelectronic integrated circuit and manufacture thereof |
| 英文摘要 | PURPOSE:To provide both semiconductor substrate and the first semiconductor layer with a composition displaying the characteristics meeting the requirements of an optical element as well as excellent crystallizability by a method wherein the semiconductor substrate and the first semiconductor layer comprise III-V compound semiconductor crystal to form an optical element using the same while the second semiconductor layer comprises an Si polycrystalline thin film to form an electronic element using the same. CONSTITUTION:A semiconductor layer 3 forming a semiconductor laser L is formed on a semiconductor layer 4 as a buffer layer comprising an InP crystal as a P-type III-V compound semiconductor crystal, another semiconductor layer 5 as an InGaAsP base active layer as well as the other semiconductor layer 6 as an InP crystal clad layer. The second semiconductor layer 11 forming a MIS type field effect transistor M comprises an Si polycrystalline thin film; a gate insulating film 15 comprising SiO2 is locally formed on a polycrystalline thin film 12 as if traversing the semiconductor layer 11 and extending over another semiconductor-layer 8R; while a gate electrode 16 is formed on the gate insulating film 15 as if traversing the semiconductor layer 11 through the intermediary of the gate insulating film 15 and extending over the semiconductor layer 8R. |
| 公开日期 | 1991-02-22 |
| 申请日期 | 1989-07-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87429]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電信電話株式会社 |
| 推荐引用方式 GB/T 7714 | SERIKAWA TADASHI,MATSUOKA TAKASHI,TANAKA HIDENAO. Optoelectronic integrated circuit and manufacture thereof. JP1991041769A. 1991-02-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。