Semiconductor light-emitting device
文献类型：专利
| 作者 | SERIZAWA HIROMOTO; HORI YOSHIKAZU; MATSUI YASUSHI; ODANI JIYUN; UNO TOMOAKI; YAMAMOTO HIROAKI |
| 发表日期 | 1988-07-07 |
| 专利号 | JP1988164384A |
| 著作权人 | 松下電器産業株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To form an excellent epitaxial layer onto an Si base body by adopting an InP-GaP group lattice relaxing layer and imparting a graded composition change or shaping a superlattice structure. CONSTITUTION:An InP composition is increased in succession from an N-type GaP composition and an N-type InxGa1-xP graded layer 2 (a lattice relaxing layer), N-type and P-type AlGaInP clad layers 3, 5, an InxGa1-xP active layer 4, a P-type AlGaInP buried layer 6 and an N-type AlGaInP buried layer 7 are formed onto an N-type Si base body. Currents flow through the layers 3, 4, 5 by forward bias applied to electrodes 8, 9, electrons and holes are recombined in the active region 4, and light is emitted. One part of emitted beams is confined by the layers 3, 5, 6, 7 having refractive indices lower than the active region, and emitted in the direction vertical to sectional structure. Accordingly, the crystallizability of a light-emitting region shaped onto the layers is improved, thus acquiring an excellent light-emitting device. |
| 公开日期 | 1988-07-07 |
| 申请日期 | 1986-12-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87432]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 松下電器産業株式会社 |
| 推荐引用方式 GB/T 7714 | SERIZAWA HIROMOTO,HORI YOSHIKAZU,MATSUI YASUSHI,et al. Semiconductor light-emitting device. JP1988164384A. 1988-07-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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