半導体レーザ
文献类型：专利
| 作者 | 八木 克己 |
| 发表日期 | 1996-01-17 |
| 专利号 | JP1996004182B2 |
| 著作权人 | 三洋電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ |
| 英文摘要 | PURPOSE:To decrease the resistivity of a semiconductor laser, by constituting an n-type clad layer with AlGaAs based material, continuously decreasing the Al composition ratio of the material as the clad layer is separated from an active layer, and decreasing the thickness of the layer. CONSTITUTION:A first clad layer 3, which is formed on a buffer layer 2 comprising Sn doped n-type GaAs, comprises Sn doped n-type Al0.25Ga0.75As. A second n-type clad layer 4 is laminated on the first n-type clad layer 3. The layer 4 comprises Sn doped n-type AlxGa1-xAs, in which an Al composition ratio X continuously changes from 0.25 to 0.4 from the interface with the first n-type clad layer 3 to the laminating direction. The thickness of the layer 4 is 0.1mum and the carrier concentration is 3X10cm. Since a part, which generates a DX center and has the Al composition ratio of 0.3, can be made very thin in this way, the resistivity of a semiconductor laser can be decreased. As a result, the cut-off frequency and the like, which are inversely proportional to the resistivity, can be improved at the time of high speed modulation of a semiconductor laser. |
| 公开日期 | 1996-01-17 |
| 申请日期 | 1987-09-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87436]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三洋電機株式会社 |
| 推荐引用方式 GB/T 7714 | 八木 克己. 半導体レーザ. JP1996004182B2. 1996-01-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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