Visible beam semiconductor laser
文献类型：专利
| 作者 | FUJII NARIAKI; KONNO NOBUAKI |
| 发表日期 | 1992-10-20 |
| 专利号 | JP1992296081A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Visible beam semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a visible beam semiconductor laser which is easily manufactured, enhanced in yield, lessened in threshold value, and able to emit laser beams nearly circular in cross section. CONSTITUTION:A second conductivity type GaAs diffusion stopper layer 6, a second conductivity type AlGaInP sub-clad layer 7, and a second conductivity type GaAs contact layer 8 are successively laminated on an AlGaInP double hetero-structure, and impurities of first conductivity type are diffused into the GaAs contact layer 8 from its front side. An impurity diffusion region 9 is provided inside the GaAs contact layer 8 so as to enable a non-diffusion region inside the sub-clad layer 7 to be smaller than that inside the GaAs contact layer 8 in width taking advantage of the diffusion rate difference of impurity between GaAs and AlGaInP. |
| 公开日期 | 1992-10-20 |
| 申请日期 | 1991-03-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87443]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | FUJII NARIAKI,KONNO NOBUAKI. Visible beam semiconductor laser. JP1992296081A. 1992-10-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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