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文献类型:专利
| 作者 | YAMAMOTO SABURO; YAMAMOTO OSAMU; MYAUCHI NOBUYUKI; HAYASHI HIROSHI |
| 发表日期 | 1992-09-03 |
| 专利号 | JP1992055357B2 |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To manufacture an incoherent semiconductor laser with good reproducibility by applying the optimum range of a current value fed to a saturated absorption range formed at a part of an optical guide. CONSTITUTION:A semiconductor laser element has a double hetero junction structure having a clad layer 7, an active layer 8, a clad layer 9 sequentially laminated on a semiconductor substrate 6, an N-type electrode 11 and a P-type electrode 12 are mounted on a cap layer 10 and the substrate 6, and a current blocking layer 13 is formed by removing in a V-shaped groove of striped shape to form a current passage. An optical guide 1 having a resonator length Lt to become a laser oscillating unit has a saturable absorption region 2 of length Lg and a main region 3, and separated by the groove 4. A branching resistor Rg is externally attached to the electrode terminal (a) of the region 2, and when the ratio of the current Ig flowing to the region 2 to the total current It is set to a range of 0.01<(Ig/It)<(2Lg/3Lg), self-excitation resonance occurs, thereby extending a spectral width. |
| 公开日期 | 1992-09-03 |
| 申请日期 | 1985-10-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87446] ![]() |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | YAMAMOTO SABURO,YAMAMOTO OSAMU,MYAUCHI NOBUYUKI,et al. -. JP1992055357B2. 1992-09-03. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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