Semiconductor laser device
文献类型：专利
| 作者 | KAN, YASUO |
| 发表日期 | 2003-01-30 |
| 专利号 | US20030021320A1 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | There is disclosed a semiconductor laser device characterized in that an electric current path from a p-type cap layer to a p-type cladding layer has a ridge stripe consisting of at least three semiconductor layers, wherein each layer has a different band gap, a top width of the p-type cladding layer is 2.5 mum or smaller, and a differential resistance of the device at a working current is 8 OMEGA or smaller. According to the present invention, a self-excited oscillation type semiconductor laser device and a real-guide type high power semiconductor laser device which have a low resistance and the high reliability at a high temperature can be provided. |
| 公开日期 | 2003-01-30 |
| 申请日期 | 2002-07-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87448]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | KAN, YASUO. Semiconductor laser device. US20030021320A1. 2003-01-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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