Manufacture of semiconductor laser device
文献类型：专利
| 作者 | KAGAWA HITOSHI; YAGI TETSUYA |
| 发表日期 | 1989-11-21 |
| 专利号 | JP1989289185A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To suppress the generation of a deep level attributable to crystal defects occurring in the vicinity of a re-growth interface and thereby to improve a laser device in service life and reliability by a method wherein meltback is effected, just before the second epitaxial growth process, for the removal of parts of a P-type GaAs buffer layer and of an N-type GaAs current stopping layer oxidized in a stripe shape trench forming process. CONSTITUTION:An N-type GaAs buffer layer 2, an N-type AlGaAs first clad layer 3, a P-type AlGaAs active layer 4, a P-type AlGaAs second clad layer 5, a P-type GaAs buffer layer 6, an N-type GaAs current stopping layer 7 are formed in lamination and grown, on an N-type GaAs substrate A process follows wherein a stripe shape trench 10 is provided by photolithographic boring, a part of the P-type AlGaAs second clad layer 5 is allowed to be exposed, and a P-type AlGaAs third clad Iayer 8 and a P-type GaAs contact layer 9 are deposited into lamination by liquid phase epitaxy, on the N-type GaAs current stopping layer 7. In this process, the contact surfaces exposed in the trench 10 in the trench forming process, of the P-type GaAs buffer layer 6 and of the N-type GaAs current stopping layer 7, are removed by meltback. |
| 公开日期 | 1989-11-21 |
| 申请日期 | 1988-05-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87449]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KAGAWA HITOSHI,YAGI TETSUYA. Manufacture of semiconductor laser device. JP1989289185A. 1989-11-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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