Semiconductor light emitting device
文献类型：专利
| 作者 | UDA MASAHITO; OYA AKIRA; SHIIKI MASATOSHI |
| 发表日期 | 1990-08-03 |
| 专利号 | JP1990196485A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To provide a semiconductor light emitting device which has an optimum structure incorporating a nonlinear effect of band gap energy and has an oscillation wavelength range from blue color to violet color by providing a semiconductor composed of first and second cladding layers that has a lattice constant substantially matched with a lattice constant of a semiconductor constructing an active layer. CONSTITUTION:A semiconductor light emitting device is constructed by an organic metal epitaxy process. First, 0.5mum thick n type ZnS0.08Se0.92 is grown on an n type GaAs 100 substrate 1 as a first cladding layer 2. Then, 0.02mum thick, Li-doped p type ZnSnTe1-x (0=0.2eV and reflective index difference DELTAn>=0.2. With materials and structures satisfy said construction realize a green colored semiconductor laser. |
| 公开日期 | 1990-08-03 |
| 申请日期 | 1989-01-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87450]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | UDA MASAHITO,OYA AKIRA,SHIIKI MASATOSHI. Semiconductor light emitting device. JP1990196485A. 1990-08-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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