Top-emitting surface emitting laser structures
文献类型：专利
| 作者 | LEE YONG H; TELL BENJAMIN |
| 发表日期 | 1995-08-18 |
| 专利号 | SG31295G |
| 著作权人 | AT&T CORP. |
| 国家 | 新加坡 |
| 文献子类 | 发明申请 |
| 其他题名 | Top-emitting surface emitting laser structures |
| 英文摘要 | Top surface emitting, vertical cavity lasers depend upon emission through apertured top surface electrodes (23). Biasing current, which is thus peripheral to the laser as introduced, follows a path (25) which comes to confluence within the active gain region to effectively attain lasing threshold. The path is a consequence of a buried region of increased resistance (shaded in the drawing) which encircles the laser at or above the active region (13). The buried region is produced by ion implantation-induced damage with ion energy magnitude and spectrum chosen to produce an appropriate resistance gradient. Integrated, as well as discrete, lasers are contemplated. |
| 公开日期 | 1995-08-18 |
| 申请日期 | 1995-02-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87464]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AT&T CORP. |
| 推荐引用方式 GB/T 7714 | LEE YONG H,TELL BENJAMIN. Top-emitting surface emitting laser structures. SG31295G. 1995-08-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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