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文献类型：专利
| 作者 | HIUGA SUSUMU |
| 发表日期 | 1990-02-08 |
| 专利号 | JP1990006239B2 |
| 著作权人 | KOGYO GIJUTSUIN |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To set the transverse mode of a semiconductor laser into a zero-order mode and to make its far field pattern into a single peak type by a method wherein the photo absorption layer in the lower direction of the face of the P-N junction having a plural light-emitting regions is provided with a distribution in its thickness in such a way as to have a distribution in its photo absorption factor in the lower direction of the P-N junction face. CONSTITUTION:An etching is performed on a blocking layer 5a between stripes 7 to provide a groove, the loss in this groove part is sufficiently lessened and the zero-order and primary transverse modes are made easy to be excited in the same degree. Moreover, as the distance between an active layer 3 and blocking layers 5 are close at the outside of the two-strip stripes 7, light is absorbed and the loss is large, the primary transverse mode having a large electric field strength is large in loss as a whole in the outside parts and becomes hardly to be excited. By this way, the zero-order transverse mode only can be excited, thereby enabling to obtain a good-quality laser beam, whose far field pattern is a single peak type and coupling property with fibers is good. |
| 公开日期 | 1990-02-08 |
| 申请日期 | 1984-12-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87465]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOGYO GIJUTSUIN |
| 推荐引用方式 GB/T 7714 | HIUGA SUSUMU. -. JP1990006239B2. 1990-02-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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