Semiconductor light-emitting and manufacture thereof
文献类型：专利
| 作者 | HOSHINA JUNICHI; OGURA MOTOTSUGU; ONAKA SEIJI |
| 发表日期 | 1990-12-10 |
| 专利号 | JP1990298090A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting and manufacture thereof |
| 英文摘要 | PURPOSE:To decrease heat generation in a clad layer for improving a characteristic by forming a structure having a P-type conductive region on one side and an n-type conductive region on the other side putting a projected stripe between in a double heterojunction structure consisting of a semiconductor substrate and a first clad layer, an active layer, a second clad layer of projected striped structure. CONSTITUTION:Epitaxial growth of an undoped Al GaInP clad layer 2, a GaInP active layer 3 and an undoped Al GaInP clad layer 4 is performed in order on an S. I. GaAs substrate. Next, the Al GaInP layer 4 is selectively etched, having an SiO2 9 as a mask to leave a layer 4 in the shape of a projected stripe. Further, undoped GaAs layers 5, 6 are made to epitaxially grow excepting a region containing the SiO2 9 mask by selective growth having SiO2 9 as a mask. Next, doping is performed in order to form P, n regions on the undoped GaAs layers 5 and 6 respectively. In this way, the P-type region 7 and n-type region 8 are formed. Lastly, a P-type electrode 9 is formed on a P-GaAs layer 5 while an n-type electrode 10 is formed on an n-GaAs layer 6 for being finished. |
| 公开日期 | 1990-12-10 |
| 申请日期 | 1989-05-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87479]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HOSHINA JUNICHI,OGURA MOTOTSUGU,ONAKA SEIJI. Semiconductor light-emitting and manufacture thereof. JP1990298090A. 1990-12-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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