Structure of semiconductor epitaxial crystal
文献类型：专利
| 作者 | HINO ISAO |
| 发表日期 | 1991-08-26 |
| 专利号 | JP1991195014A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Structure of semiconductor epitaxial crystal |
| 英文摘要 | PURPOSE:To obtain a maximum possible energy gap in an average composition of a compound semiconductor mixed-crystal epitaxial film by a method wherein different bonding lengths of a group III element and a group V element are provided, their composition is changed in a specific cycle in the formation direction of a film and a definite composition is provided as an average of the whole. CONSTITUTION:An epitaxial film having a definite composition is structured in such a way that it is composed of a pluralistic mixedcrystal compound semiconductor of a group III element and a group V element having different bonding lengths and that its composition is changed in a cycle of about 10Angstrom or lower in the formation direction of the film. That is to say, when, in the case of GaInP, the composition of raw-material atoms is changed in the growth-layer direction on each growth surface, a spontaneous superlattice cannot be maintained in the growth-layer direction; many interfaces in which Ga has been replaced by In are formed in the growth-layer direction; the arrangement of Ga and In on a sublattice of the group III element becomes disordered. Thereby, a maximum energy gap which can be expected from an average composition of their mixed crystal can be obtained irrespective of a growth method or a growth condition. |
| 公开日期 | 1991-08-26 |
| 申请日期 | 1989-12-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87481]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | HINO ISAO. Structure of semiconductor epitaxial crystal. JP1991195014A. 1991-08-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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