Semiconductor laser
文献类型：专利
| 作者 | TAKEUCHI YOSHINORI; TAKENAKA NAOKI |
| 发表日期 | 1987-06-06 |
| 专利号 | JP1987124791A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a waveform multiple distributed feedback type semiconduc tor laser having simple structure by forming an optical waveguide having the direction of propagation of beams, which does not coincide with the direction of the wave number vector of periodic structure to a layer having the periodic structure or the upper layer or lower layer of the layer and using the optical waveguide as an active layer. CONSTITUTION:Periodic structure, that is a diffraction grating 2, is shaped onto a substrate 1, and three optical waveguides 4a-4c are formed to the upper layer of the diffraction grating in a shape that they are held by clad layers 3a, 3b and employed as active layers. The direction of propagation of beams of the active layer 4a coincides with the direction of the wave number vector of the diffraction grating 2, but those of 4b and 4c form a fixed angle with a wave number vector. Consequently, when currents are injected to the active layers 4a-4c from an electrode 6 and electrodes 5a-5c, each active layer laser-oscillates at different wavelengths. The electrodes 5a-5c are each separated, and output beams from respective active layer can directly be modulated independently. |
| 公开日期 | 1987-06-06 |
| 申请日期 | 1985-11-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87484]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | TAKEUCHI YOSHINORI,TAKENAKA NAOKI. Semiconductor laser. JP1987124791A. 1987-06-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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