Semiconductor laser device
文献类型：专利
| 作者 | SUZUKI, NOBUO; MORINAGA, MOTOYASU; FURUYAMA, HIDETO; HIRAYAMA, YUZO; OKUDA, HAJIME; NAKAMURA, MASARU; MOTEGI, NAWOTO |
| 发表日期 | 1989-08-15 |
| 专利号 | US4858241 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA, A CORP OF JAPAN |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A semiconductor laser device comprises a semiconductor mesa portion formed above semiconductor substrate by a predetermined interval, an active region, formed between the mesa portion and semiconductor substrate and consisting of a semiconductor having a forbidden band width smaller than those of the mesa portion and semiconductor substrate, for contributing to light emission, a pair of buried portions formed at both sides in a widthwise direction of and in contact with the active region and consisting of a semiconductor having a forbidden band width larger than that of the active region, a total width of the buried portions and the active region being smaller than that of the mesa portion, thereby forming a gap at a side of each of the buried portions between the mesa portion and semiconductor substrate to electrically insulate the mesa portion and semiconductor substrate, and supporting portions formed integrally with the mesa portion so as to support the mesa portion with respect to the substrate in association with the active region and the buried portions. |
| 公开日期 | 1989-08-15 |
| 申请日期 | 1988-05-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87490]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA, A CORP OF JAPAN |
| 推荐引用方式 GB/T 7714 | SUZUKI, NOBUO,MORINAGA, MOTOYASU,FURUYAMA, HIDETO,et al. Semiconductor laser device. US4858241. 1989-08-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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