A semiconductor light-emitting device and a method of manufacture
文献类型：专利
| 作者 | KATHERINE, LOUISE, JOHNSON; STUART, EDWARD, HOOPER; VALERIE, BOUSQUET; MATTHIAS, KAUER; JONATHAN, HEFFERNAN |
| 发表日期 | 2005-10-26 |
| 专利号 | GB2413434A |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 英国 |
| 文献子类 | 发明申请 |
| 其他题名 | A semiconductor light-emitting device and a method of manufacture |
| 英文摘要 | A method of manufacturing a semiconductor light-emitting device comprises selectively etching a semiconductor layer structure 16 fabricated in a nitride materials system and including an aluminium-containing cladding layer or an aluminium-containing optical guiding layer 5. The etching step forms a mesa 17, and also exposes one or more portions of the aluminium-containing cladding layer or the aluminium-containing optical guiding layer 5 . The or each exposed portion of the aluminium-containing cladding layer or the aluminium-containing optical guiding layer 5 is then oxidised to form a current blocking layer 18 laterally adjacent to and extending laterally from the mesa. When an electrically conductive contact layer 11 is deposited, the current blocking layer 18 will prevent the contact layer 11 from making direct contact with the buffer layer 3. |
| 公开日期 | 2005-10-26 |
| 申请日期 | 2004-01-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87494]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | KATHERINE, LOUISE, JOHNSON,STUART, EDWARD, HOOPER,VALERIE, BOUSQUET,et al. A semiconductor light-emitting device and a method of manufacture. GB2413434A. 2005-10-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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