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文献类型：专利
| 作者 | SAKAI KAZUO; MATSUSHIMA JUICHI; AKIBA SHIGEYUKI; UKO KATSUYUKI |
| 发表日期 | 1988-10-20 |
| 专利号 | JP1988052792B2 |
| 著作权人 | KOKUSAI DENSHIN DENWA CO LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To perform the increase in the light confining coefficient while preventing the leakage of carrier by laminating a plurality of semiconductor layers having different forbidden band width at both sides of an active layer and 0.03mum or less of thickness. CONSTITUTION:A photowaveguide layer 22 in which many N type InP clad layer 21, and N type InP and N type InGaAsP [lambdag (wavelength corresponding to forbidden band width)=55mum] having 0.03mum or less of thickness are alternately laminated, a non-doped InGaAsP active layer 23 having lambdag=55mum, a photowaveguide layer 24 having a P type InP in which 0.33mum or less of thickness and P type InGaAsP (lambdag=55mum) are alternately laminated, a P type InP clad layer 25, and a P type InGaAsP layer 26 ar sequentially laminated. In this structure, since the layer which is contact directly with the layer 23 is InP, the value of the energy barrier observed from the active layer is increased more. |
| 公开日期 | 1988-10-20 |
| 申请日期 | 1982-12-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87497]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOKUSAI DENSHIN DENWA CO LTD |
| 推荐引用方式 GB/T 7714 | SAKAI KAZUO,MATSUSHIMA JUICHI,AKIBA SHIGEYUKI,et al. -. JP1988052792B2. 1988-10-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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