Manufacture of semiconductor laser device
文献类型：专利
| 作者 | MIHASHI YUTAKA; KUMABE HISAO; SOGOU TOSHIO; TAKAMIYA SABUROU |
| 发表日期 | 1982-11-12 |
| 专利号 | JP1982184275A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To allow the mass production of a laser diode in good characteristic of transverse directional type with good reproducibility and yield, by forming a specific groove on the semiconductor substrate surface for the impurity diffusion from the exposure surface thereof to form an active layer. CONSTITUTION:An N type AlGaAs clad layer 2, N type AlGaAs active layer 3, N type AlGaAs clad layer 4 and N type GaAs contact layer 5 are successively grown on the main surface of a semi-insulating GaAs substrate 1 to heap an Si3N4 film 12 next to open an opening part 14 to a stripe. Next, a V-shaped groove 15 with a depth reaching e.g. substrate 1 is formed by etching. Subsequently, after the removal of the Si3N4 film 12 on a p electrode 9 side layer 5, Zn is diffused to form a p region 6 further to form a p region 7 by a drive process. Thereafter, the left Si3N4 film 12 is removed and p region diffused on the layer 5 is removed by etching later to form p electrode 9 and n electrode 10. |
| 公开日期 | 1982-11-12 |
| 申请日期 | 1981-05-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87500]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | MIHASHI YUTAKA,KUMABE HISAO,SOGOU TOSHIO,et al. Manufacture of semiconductor laser device. JP1982184275A. 1982-11-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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