Manufacture of semiconductor laser
文献类型：专利
| 作者 | FUJIWARA KIYOSHI; ISHINO MASATO; MATSUI YASUSHI |
| 发表日期 | 1992-12-22 |
| 专利号 | JP1992369886A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To provide a method of manufacturing a buried type semiconductor laser where an active layer is enhanced in width controllability by a method wherein both a dry etching method and a wet etching method are used. CONSTITUTION:An etching mask is formed on a wafer of semiconductor multilayer film structure which contains an InGaAsP active layer 3, a p-InP clad layer 4, and a p-InGaAsP surface protective layer 5, and the InGaAsP active layer 3 is removed by an dry etching method with CCl4 gas. Furthermore, the formation of a mesa stripe 7 and the removal of the damaged layer located at the side face of the active layer are carried out through a wet etching method. Lastly, a p-InP current block layer 8 and an n-InP current block layer 9 are made to grow on a region other than the mesa stripe 7 through a liquid epitaxial growth, and furthermore a p-InP buried layer 10 and a p-InGaAsP contact layer 11 are successively grown for the formation of a buried type hetero-structure. |
| 公开日期 | 1992-12-22 |
| 申请日期 | 1991-06-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87502]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | FUJIWARA KIYOSHI,ISHINO MASATO,MATSUI YASUSHI. Manufacture of semiconductor laser. JP1992369886A. 1992-12-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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