Semiconductor laser device and fabrication method thereof
文献类型：专利
| 作者 | SAWAKI, NOBUHIKO; HONDA, YOSHIO; KAMESHIRO, NORIFUMI; YAMAGUCHI, MASAHITO; KOIDE, NORIKATSU; ITO, SHIGETOSHI; ONO, TOMOKI; FURUKAWA, KATSUKI |
| 发表日期 | 2005-05-03 |
| 专利号 | US6888867 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device and fabrication method thereof |
| 英文摘要 | A semiconductor laser device includes a substrate and an n-GaN layer composed of a nitride semiconductor formed on the substrate. The substrate includes a trench having as a slope a plane inclined 62 degrees from the main plane of the substrate, or a plane inclined within 3 degrees in an arbitrary direction from the inclined plane. The n-GaN layer is formed on the slope. On the n-GaN layer are formed a lower clad layer, an active layer, and an upper clad layer, each composed of a nitride semiconductor. The active layer has a plane orientation substantially matching the plane orientation of the main plane. |
| 公开日期 | 2005-05-03 |
| 申请日期 | 2002-03-26 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87503]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | SAWAKI, NOBUHIKO,HONDA, YOSHIO,KAMESHIRO, NORIFUMI,et al. Semiconductor laser device and fabrication method thereof. US6888867. 2005-05-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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