Semiconductor laser device
文献类型：专利
| 作者 | ISSHIKI, KUNIHIKO |
| 发表日期 | 1991-05-28 |
| 专利号 | US5020068 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A multi-quantum well laser having a self-aligned structure which limits catastophic optical damage by producing window regions near the facets without significantly decreasing the efficiency of the laser. The semiconductor laser includes at least a first conductivity type lower cladding layer, an active layer including a multi-quantum well structure, a second conductivity type first upper cladding layer, a first conductivity type current blocking layer, and a second conductivity type second upper cladding layer successively disposed on a first conductivity type semiconductor substrate. The current blocking layer has a central elongate stripe shaped current confinement groove extending between the laser facets which stabilizes the transverse mode and confines current to a channel-like region in the active layer. First conductivity type dopant impurities form disordering regions located adjacent the facets which invade and disorder the multi-quantum well active layer to create disordered active layer regions. Second conductivity type dopant impurities form separating regions located adjacent the faects which separate the current blocking layer and the disordering regions to prevent current leakage between the current blocking layer and the disordering regions. |
| 公开日期 | 1991-05-28 |
| 申请日期 | 1989-11-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87505]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | ISSHIKI, KUNIHIKO. Semiconductor laser device. US5020068. 1991-05-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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