Semiconductor laser device
文献类型：专利
| 作者 | IKUWA YOSHITO; NITSUTA SHIGEYUKI; SUZAKI WATARU; TAKAMIYA SABUROU |
| 发表日期 | 1983-01-19 |
| 专利号 | JP1983009386A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain the device with a small threshold current by a method wherein the laser beam emitting region, on the laser oscillation surface on the laser beam outputting side, is formed into an N type region, and the opposite end of the oscillation surface is coated by mirror reflecting film, thereby the temperature rise in the vicinity of the light-emitting region is reduced. CONSTITUTION:A Ga0.7Al0.3As first clad layer 2, a Ga0.7Al0.3As active layer 3, and a Ga0.7Al0.3As second clad layer 4 are grown by lamination on a semiconductor GaAs substrate 1, and the forbidden band width in the layer 3 is narrowered than layers 1 and 2. Then a P type region 6, entering into the substrate 1, and a P type region 5, to be positioned above the region 6, are formed by diffusing P type impurities from a part of the surface of the above laminated materials, and a contact surface 11, which was made when the regions 5 and 6 were formed, as shown by 11A in the vicinity of the resonant surface 10a on the irradiation side. Also, the mirror reflection film 13 is coated on the resonant surface 10b on the opposite side, and the laser beam emitted from the film 13 is blocked. Subsequently, a P-side electrode 8 and an N-side electrode 9 are coated respectively in such a manner that the laser beam emitting region 12A is pinched between them. |
| 公开日期 | 1983-01-19 |
| 申请日期 | 1981-07-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87509]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | IKUWA YOSHITO,NITSUTA SHIGEYUKI,SUZAKI WATARU,et al. Semiconductor laser device. JP1983009386A. 1983-01-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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