Manufacture of semiconductor laser
文献类型：专利
| 作者 | NIDOU MASAAKI; KAWANO HIDEO; WAKITA KOUICHI |
| 发表日期 | 1984-07-30 |
| 专利号 | JP1984132185A |
| 著作权人 | NIPPON DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To improve productivity and to enhance a yield rate, by a first liquid phase epitaxial growing process, an etching process, a process, by which a second liquid phase epitaxial growing is performed in the etched region, and a third liquid phase epitaxial growing process. CONSTITUTION:On an N type GaAs substrate 9, the following layers are formed by epitaxial growth: an N type Al0.3Ga0.7As clad layer 1; an N type Al0.1Ga0.9As light guiding layer 2; an Al0.03Ga0.97As active layer 3; and a P type Al0.3Ga0.7As clad layer 4. Then, the semiconductor layers 1-4 are made to remain in stripe shapes by etching. Then, a P type Al0.3Ga0.7As layer 5 and an N type Al0.3Ga0.7 As layer 6 are provided by the epitaxial growth. An oxide layer 14 is formed on the layer 4. Then, a P type Al0.3Ga0.7As layer 7 and a P type GaAs layer 8 are sequentially formed by a liquid phase epitaxial growth. |
| 公开日期 | 1984-07-30 |
| 申请日期 | 1983-01-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87511]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENKI KK |
| 推荐引用方式 GB/T 7714 | NIDOU MASAAKI,KAWANO HIDEO,WAKITA KOUICHI. Manufacture of semiconductor laser. JP1984132185A. 1984-07-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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