Method for liquid-phase epitaxial growth
文献类型：专利
| 作者 | YAMAZAKI SUSUMU; OKAZAKI JIROU |
| 发表日期 | 1984-04-07 |
| 专利号 | JP1984061125A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Method for liquid-phase epitaxial growth |
| 英文摘要 | PURPOSE:To grow an InP layer without generation of a meltback as well as to form an excellent hetero-junction interface between said InP layer and an InGaAs layer by a method wherein the InGaAs layer is grown on an InP substrate at the specific growth termination temperature, and the InP layer grown at the specific cooling speed in such a manner that it comes in contact with the InGaAs layer. CONSTITUTION:The InP substrate 1, having the raw material of solution of the prescribed composition ratio and the surface 111A as a main surface, is placed in a sliding boat, and it is maintained at an approximate temperature of 630 deg.C for approximtely one hour. Subsequenty, using the temperature program having a growth termination temperature of 580 deg.C or below, the meltback of the InP substrate 1 and the growth of the first InP layer 2, an InGaAs layer 3 and the second InP layer 4 are performed successively while said InP substrate 1 is being cooled when the fixed cooling speed alpha is 2 deg.C/min or above, namely. alpha=2.5 deg.C/min for example. The lattice dismatching of DELTAa/a with the InGaAs layer 3, the InGaAs layers 2 and 3 in room temperature of the semiconductor substrate formed through the above procedures is brought to -0.03%, for example, which is within the tolerance limit. |
| 公开日期 | 1984-04-07 |
| 申请日期 | 1982-09-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87512]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | YAMAZAKI SUSUMU,OKAZAKI JIROU. Method for liquid-phase epitaxial growth. JP1984061125A. 1984-04-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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