中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Method for liquid-phase epitaxial growth

文献类型:专利

作者YAMAZAKI SUSUMU; OKAZAKI JIROU
发表日期1984-04-07
专利号JP1984061125A
著作权人FUJITSU KK
国家日本
文献子类发明申请
其他题名Method for liquid-phase epitaxial growth
英文摘要PURPOSE:To grow an InP layer without generation of a meltback as well as to form an excellent hetero-junction interface between said InP layer and an InGaAs layer by a method wherein the InGaAs layer is grown on an InP substrate at the specific growth termination temperature, and the InP layer grown at the specific cooling speed in such a manner that it comes in contact with the InGaAs layer. CONSTITUTION:The InP substrate 1, having the raw material of solution of the prescribed composition ratio and the surface 111A as a main surface, is placed in a sliding boat, and it is maintained at an approximate temperature of 630 deg.C for approximtely one hour. Subsequenty, using the temperature program having a growth termination temperature of 580 deg.C or below, the meltback of the InP substrate 1 and the growth of the first InP layer 2, an InGaAs layer 3 and the second InP layer 4 are performed successively while said InP substrate 1 is being cooled when the fixed cooling speed alpha is 2 deg.C/min or above, namely. alpha=2.5 deg.C/min for example. The lattice dismatching of DELTAa/a with the InGaAs layer 3, the InGaAs layers 2 and 3 in room temperature of the semiconductor substrate formed through the above procedures is brought to -0.03%, for example, which is within the tolerance limit.
公开日期1984-04-07
申请日期1982-09-30
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/87512]  
专题半导体激光器专利数据库
作者单位FUJITSU KK
推荐引用方式
GB/T 7714
YAMAZAKI SUSUMU,OKAZAKI JIROU. Method for liquid-phase epitaxial growth. JP1984061125A. 1984-04-07.

入库方式: OAI收割

来源:西安光学精密机械研究所

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