Semiconductor laser
文献类型：专利
| 作者 | ISHIGURO NAGATAKA |
| 发表日期 | 1989-01-27 |
| 专利号 | JP1989025592A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To improve reliability by forming filling layers consisting of two or more p-type and n-type layers which surround laterally a mesa-type stripe-shaped double heterojunction, and using as the first layer thereof a semiconductor layer having an electrical conductivity similar to that of a substrate used at the time of forming the double heterojunction. CONSTITUTION:After growing an N-type InP-clad layer 22, an activated InGaAsP layer 1, and a P-type InP clad layer 3 on an N-type InP substrate 12 by the liquid phase epitaxial growth method, a stripe profile which is parallel to the direction is formed by an SiO2 mask so that the width of an activated layer is approximately 2mum. Through the second liquid phase epitaxial growth process a BH laser structure is formed by growing an N-type InP layer 6, a P-type InP layer 4, and an N-type InP layer 5 in this sequence, and filling an activated layer. Accordingly, at the time of filling and growing, an interface is formed on an area exposed, before the growth, to an ambient gas by an electrical conductive layer similar thereto. As a result, a p-n junction is formed distant from this position, thereby preventing the deterioration of quality. According to the constitution, the generation of a leak current at the filling layers, which is a major cause of the deterioration of BH laser characteristics, can be checked. |
| 公开日期 | 1989-01-27 |
| 申请日期 | 1987-07-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87524]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | ISHIGURO NAGATAKA. Semiconductor laser. JP1989025592A. 1989-01-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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